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Your Galaxy S10 might pack Samsung's new 1 terabyte V-NAND storage
Samsung has begun mass producing one-terabyte eUFS 2.1 storage, the company announced today. The announcement comes following rumors that the company would introduce a Galaxy S10 variant with a terabyte of storage. The high capacity flash storage uses the same physical space as the previously announced 512GB flash found in the high end version of the Galaxy Note 9.
The storage is based on Samsung’s advanced V-NAND flash memory technology which has enhanced density, lower power requirements and generally faster speeds. It makes use of vertical stacking of single NAND cells which, compared to the horizontal layered arrangement of regular NAND, is a lot more efficient.
What can users expect?
While Samsung claims that the eUFS 2.1 based storage can achieve sequential read speeds as high as 1,000 megabytes per second, you are unlikely to hit that number in real-world use. Random speeds are what matter more and preliminary figures released by Samsung reveal that those too have improved quite a bit.
Random write speeds, in particular, should help enable applications like continuous high frame shooting. So far most phones have been limited to just a few seconds of high frame rate video capture. Samsung says that the higher read and write speeds on the new V-NAND based 1 terabyte storage solution will be sufficient to enable continuous, long term video recording at 960 frames per second.
Production for the flash storage has begun at the Samsung’s plant in Pyeongtaek, Korea and we expect to start hearing about phones launching with the high capacity storage at MWC. Given the previous speculation, and Galaxy S10‘s confirmed launch on February 20, there’s a good chance we’ll see the storage included in a version of that handset.
What do you think about a terabyte of storage on a phone? Do you carry around enough media to justify the high capacity or have you embraced a cloud-first future? Let us know in the comments!