Samsung recently claimed that it makes so many smartphones, its components divisions can’t keep up. However, that isn’t stopping Samsung from pushing to bring new technology to the fray.
Today, Samsung Electronics announced the world first, ultra-high-speed four gigabit (Gb) LPDDR3 mobile RAM, manufactured at 20 nanometer class process node. The new technology is claimed to bring the performance levels of mobile devices closer to the standard DRAM found in computers, a feat worthy of praise.
“By providing the most efficient next-generation mobile memory with a very large data capacity, we are now enabling OEMs to introduce even more innovative designs in the marketplace.”
The new chip can transmit data at a maximum rate of 2,133 megabits per second, doubling the performance of LPDDR2 which had a transmission speed of 800 Mbps. To put that into perspective, this chip makes it possible to transmit three full HD videos, at a collective 17 GB in length, in just one second.
This new DRAM allows for a 30% improvement in performance and 20% saving in power consumption, when compared to a 30nm LPDDR3 DRAM chip. Samsung say that they plan on increasing production later in the year, meaning that it is highly unlikely this technology will be implemented in the Galaxy Note 3.
Although demand for computer RAM is falling, market research firm Gartner report that the RAM market is forecasted to grow by 13% year-over-year, reaching $29.6 billion (US) in 2013 with mobile DRAM to account for 35% of the market and exceed $10 billion in sales.